A study of native oxides of β–SiC using Auger electron spectroscopy

Production of large-area single-crystal wafers of cubic SiC for semiconductor devices

Shigehiro Nishino, J. A. Powell · Applied Physics Letters · 1983 · 926 citations

Engineering, Materials Engineering, Materials Science +17

Epitaxial Growth and Characterization of β ‐ SiC Thin Films

Peter K. Liaw, R. F. Davis · Journal of The Electrochemical Society · 1985 · 247 citations

Engineering, Materials Engineering, Materials Science +17

‘‘Buffer-layer’’ technique for the growth of single crystal SiC on Si

Arrigo Addamiano, J.A. Sprague · Applied Physics Letters · 1984 · 138 citations

Engineering, Materials Engineering, Materials Science +15

Oxidation of SiC powder by high-temperature, high-pressure H₂O

Masahiro Yoshimura, Jun-ichiro Kase, Shigeyuki Sōmiya · Journal of materials research/Pratt's guide to venture capital sources · 1986 · 62 citations

Natural Sciences, Materials Engineering, Materials Science +12

High-Temperature Electronic Requirements in Aeropropulsion Systems

W. C. Nieberding, J. A. Powell · IEEE Transactions on Industrial Electronics · 1982 · 47 citations · Full text

Engineering, Aerospace Engineering, Electrical Engineering +16