GaAs/AlAs coupled multilayer cavity structures for terahertz emission devices

Abstract

GaAs/AlAs coupled multilayer cavity structures are proposed as terahertz emission devices. Two cavity modes with an optical frequency difference in the terahertz region can be realized when two cavity layers are coupled by an intermediate distributed Bragg reflector multilayer. Interference between the enhanced light fields of the cavity modes has been demonstrated by the simultaneous injection of two cavity-mode lights using an ultrashort pulse laser. Such coupled multilayer cavity structures are promising for use as compact and room temperature operable terahertz emission devices based on difference frequency generation by the cavity-mode lights.