Molecular beam epitaxy growth and doping of III-nitrides on Si(111): layer morphology and doping efficiency - Concepedia

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Molecular beam epitaxy growth and doping of III-nitrides on Si(111): layer morphology and doping efficiency

42

Citations

19

References

2001

Year

E. Calleja, M. A. Sánchez-Garcı́a, F. Calle, F. B. Naranjo, E. Muñoz, U. Jahn, K. H. Ploog, J. E. Sánchez, J. M. Calleja, K. Saarinen,

Materials Science and Engineering B

Materials ScienceDoping EfficiencyEngineeringApplied PhysicsLayer MorphologyMolecular Beam EpitaxyEpitaxial GrowthCompound Semiconductor

References

	Year	Citations

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