Ultra-scaled high-frequency single-crystal Si NEMS resonators and their front-end co-integration with CMOS for high sensitivity applications

Abstract

This paper reports on ultra-scaled single-crystal Si NEMS resonators (25-40 nm thick) operating in the 10-100 MHz frequency range. Their first monolithic integration at the front-end level with CMOS enables to extract the signal from background leading to possible implementation of direct/homodyne measurement, for high sensitivity sensing applications and portable systems.