Low on‐resistance AlGaN/GaN HEMTs by reducing gate length and source‐gate length

Abstract

Abstract To reduce the on‐resistance of AlGaN/GaN HEMTs, the gate length ( L G ) and gate‐source ( L SG ) length were reduced to submicron order. The reduction of L G and L SG effectively decreased the drain‐source spacing ( L SD ), which led to the reduction of the on‐resistance without degrading the breakdown voltage. Moreover, the reduction of L G and L SG enhanced the drain current and transconductance. The specific on‐resistance of 0.1 mΩ‐cm 2 was achieved at a L G of 0.10 μm and a L SG of 0.5 μm. The breakdown voltage of 56 V was obtained at a specific on‐resistance of 0.12 mΩ‐cm 2 . This high breakdown voltage was achieved by extending the drain‐gate spacing due to the short L G and L SG . These characteristics of the fabricated device are equivalent to the trade‐off characteristics of the numerical calculation. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)