(Invited) Heteroepitaxial Growth of Sn-Related Group-IV Materials on Si Platform for Microelectronic and Optoelectronic Applications: Challenges and Opportunities

Abstract

We have examined the heteroepitaxial growth of Ge 1-x Sn x and Ge 1-x-y Si x Sn y layers and investigated the crystalline and electrical properties of these Sn-related group-IV material thin films. We achieved the epitaxial growth of Ge 1-x Sn x on Ge(110) with suppressing the formation of twin defects. Ge 1-x-y Si x Sn y layers on Ge substrates show high thermal robustness without Sn precipitation even after annealing at 600°C. We also found that the incorporation of 0.1%-Sn and H 2 -annealing are effective to reduce the unintentional generation of holes due to the vacancy defects.