Deep levels induced by high-energy boron ion implantation into <i>p</i>-silicon

Abstract

Defects induced by B+ implantation at 0.7 MeV into n+p diodes were investigated using leakage current and deep level transient spectroscopy (DLTS). Leakage current increases drastically by implantation to a dose of more than 3×1013 cm−2. DLTS spectra reveal two hole trap levels in the shallower region than the projected range of B+. One level at 265 K (Ev+0.65 eV) is associated with point defects around dislocation kinks formed by B+ implantation to doses of more than 3×1013 cm−2. Another level at 290 K (Ev+0.67 eV) is mainly responsible for the excess leakage current. This level was, for the first time, found in p-Si after high-energy ion implantation followed by annealing.