42.1: <i>Invited Paper</i> : Improved Amorphous In‐Ga‐Zn‐O TFTs

Abstract

Abstract We review the features of amorphous In‐Ga‐Zn‐O (a‐IGZO) thin‐film transistors (TFTs), as well as circuit operation based on these TFTs. We also report a novel TFT structure which improves environmental stability of the TFT operation by taking full advantage of the a‐IGZO properties, where a conventional PECVD a‐SiN X :H films serve not only as an effective barrier layer but also as a hydrogen source to form the coplanar source and drain.