SID Symposium Digest of Technical Papers · 2008 · 56 citations · 24 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsThin FilmsAmorphous Electronic MaterialsAmorphous SemiconductorsSemiconductor Device MaterialsSemiconductor Thin FilmsThin-film MaterialsThin-film TransistorsAmorphous Oxide SemiconductorsAmorphous Semiconductor FilmsAmorphous Thin FilmsEnvironmental StabilityOxide Thin-film TransistorsSemiconductor Oxide Thin FilmsThin-film OxidesThin-film Semiconductors
Abstract We review the features of amorphous In‐Ga‐Zn‐O (a‐IGZO) thin‐film transistors (TFTs), as well as circuit operation based on these TFTs. We also report a novel TFT structure which improves environmental stability of the TFT operation by taking full advantage of the a‐IGZO properties, where a conventional PECVD a‐SiN X :H films serve not only as an effective barrier layer but also as a hydrogen source to form the coplanar source and drain.
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Hydrogen as a Cause of Doping in Zinc Oxide
Chris G. Van de Walle · Physical Review Letters · 2000 · 2.2K citations · Full text