Unipolar resistive switching in CoFeB∕MgO∕CoFeB magnetic tunnel junction

Abstract

We found that a magnetic tunnel junction (MTJ) shows two types of memory operation. One is spin torque switching, and the other is electric stress induced resistive switching (RS), which is observed in various metal oxides. A MTJ in RS operation exhibits a resistance ratio of greater than 100, an endurance of more than 400cycles, and data retention in excess of 89h at 85°C, which is suitable for programable switch elements. The MTJ can operate as a programable switch, as well as a storage element, in a field programable gate array.