MOS-device modeling for computer implementation

Abstract

Generalized MOS-device and circuit modeling problems are discussed. Guidelines for comparing MOS-device models, for selecting phenomena to be modeled, for acquiring model parameters, and for implementing the model are established. A voltage variable capacitance subroutine within a four-terminal <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Q_B</tex> field-dependent model is recommended. The importance of accurate data acquisition and model and parameter maintenance is stressed and computer implementation configurations are discussed.