Applied Physics Letters · 1994 · 42 citations · 3 references
EngineeringMaterials ScienceElectronic MaterialsSemiconductor MaterialsSpectroscopyCompound SemiconductorsElectronic Band StructureIii-v SemiconductorsOptical Properties Of SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsAluminum Gallium NitrideGallium Nitride
The electron effective masses for Al0.15Ga0.35In0.5P and Ga0.5In0.5P have been investigated using conventional and optically detected cyclotron resonance. For AlGaInP (partly ordered) it is determined to be m*=(0.14±0.01) m0. For disordered GaInP the mass is found to be m*=(0.092±0.003) m0 and for ordered material (band gap reduction ∼50 meV) m*=(0.088±0.003) m0. The experimentally deduced values are compared with those obtained from five-band k⋅p calculation.
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Determination of the GaInP/AlGaInP band offset
C.T.H.F. Liedenbaum, A. Valster, A. L. G. J. Severens et al. · Applied Physics Letters · 1990 · 82 citations