Confirmation of P-Type Conduction in Li-Doped ZnSe Layers Grown on GaAs Substrates

Abstract

Hall effect measurements were carried out for Li-doped MOCVD ZnSe layers whose GaAs substrates were removed. This made it possible to obtain the original p-type properties for the layers. Hole concentration, Hall mobility and specific resistivity were 4.1×10 16 cm -3 , 24 cm 2 /V ·s and 6.4 Ω·cm, respectively. Furthermore, the characteristics for the GaAs inversion layers, which were changed from semi-insulating to p-type by Zn diffusion from the ZnSe layers, were estimated by comparing the results of samples without GaAs substrates with those with GaAs substrates.