IEEE Electron Device Letters · 1983 · 18 citations · 7 references
EngineeringPhysicsCondensed Matter PhysicsSemiconductor MaterialsTransport PhenomenaElectron TransportElectronic Transport ModelingMonte Carlo Transport MethodsSemiconductor PhysicsTime-dependent TransportTransport PropertiesBallistic TransportDisplacementElectron Transport In SemiconductorsEnsemble SimulationLangevin EquationsMonte Carlo Electron TransportPhenomenological InterpretationTransport In Semiconductors
Ballistic transport in GaAs has been studied using an ensemble Monte Carlo simulation. Duration and spatial extent of ballistic transport for a hot electron distribution can be defined from such studies. Mean displacement of the ensemble increases quadratically with time for a specified interval. This observation provides a phenomenological definition of ensemble ballistic transport. This phenomenological definition is compared with a theoretical definition based on time at which a significant fraction of an ensemble have experienced at least one collision. From these studies, times and distances are given for which a single-particle ballistic equation and a Langevin equation accurately describe ensemble transport in GaAs.
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Ballistic electron transport in semiconductors
K. Hess · IEEE Transactions on Electron Devices · 1981 · 71 citations
Ballistic transport in semiconductors
R. Grondin, Paolo Lugli, D. K. Ferry · IEEE Electron Device Letters · 1982 · 18 citations