Relationship between solid and vapor phase compositions for InxGa1−xSb epilayers grown by MOCVD

Long-wavelength infrared detectors based on strained InAs–Ga1−<i>x</i>In<i>x</i>Sb type-II superlattices

C. Mailhiot, D. L. Smith · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1989 · 121 citations

Natural Sciences, Materials Science, Physics +17

Growth of GaSb by MOVPE

S. K. Haywood, A. B. Henriques, N. J. Mason et al. · Semiconductor Science and Technology · 1988 · 82 citations

Engineering, Materials Engineering, Materials Science +14

Growth and characterization of InAs/Ga1−<i>x</i>In<i>x</i>Sb strained-layer superlattices

D. H. Chow, R. H. Miles, J. R. Söderström et al. · Applied Physics Letters · 1990 · 79 citations

Natural Sciences, Materials Science, Physics +17

Growth of InSb and InAs1 − x Sb x by OM‐CVD

P.K. Chiang, S. M. Bedair · Journal of The Electrochemical Society · 1984 · 76 citations

Engineering, Materials Engineering, Materials Science +16

GaInAsSb metastable alloys grown by organometallic vapor phase epitaxy

M. J. Cherng, G. B. Stringfellow, D. W. Kisker et al. · Applied Physics Letters · 1986 · 70 citations

Natural Sciences, Materials Engineering, Materials Science +15