An Optical Absorption Property of Highly Beryllium-Doped GaInAsP Grown by Chemical Beam Epitaxy

Abstract

The optical absorption property of highly beryllium (Be)-doped GaInAsP (λ g =1.31 µm, p =2×10 19 cm -3 ) grown by chemical beam epitaxy (CBE) was investigated. The absorption coefficient was estimated from the transmissivity of a Fabry-Perot resonator formed by selective etching of an InP substrate. We found a fairly large absorption (α\cong400 cm -1 ) in Be-doped material in the longer wavelength region (λ>1.35 µm).