Japanese Journal of Applied Physics · 1980 · 197 citations · 8 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLaser PhysicsOptical Properties Of SemiconductorsSemiconductor LasersThermal Properties Of SemiconductorsWide Band Gap SemiconductorsWide-bandgap SemiconductorsCurrent DensityDifferential EfficiencyDifferential Quantum EfficiencyQuantum EfficiencyTemperature DependenceTemperature Dependence Of Laser PerformanceValence BandValence Band Structure
Measurements are presented of the temperature dependence of the differential quantum efficiency ηd and threshold current density Jth of 1.6 µm In1-xGaxAsyP1-y lasers. The observed sharp decrease in ηd near room temperature is interpreted as due to absorption associated with transitions of electrons from the split-off valence band into holes injected into and thermally generated within the heavy hole valence band. Preliminary calculations using conventional laser theory predict a temperature variation corresponding to T0≃145 K. This together with the influence of ηd, appears to be sufficient to explain most of the observed temperature variation of Jth.
8
Valence-Band Parameters in Cubic Semiconductors
P. Lawaetz · Physical review. B, Solid state · 1971 · 1.1K citations
Infra-red Absorption in Semiconductors
Heng Fan · Reports on Progress in Physics · 1956 · 230 citations