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The Temperature Dependence of the Efficiency and Threshold Current of In<sub>1-<i>x</i></sub>Ga<sub><i>x</i></sub>As<sub><i>y</i></sub>P<sub>1-<i>y</i></sub>Lasers Related to Intervalence Band Absorption
197
Citations
8
References
1980
Year
PhotonicsTemperature VariationRoom TemperatureEngineeringLaser SciencePhysicsThermal RadiationOptical PropertiesApplied PhysicsLaser PhysicsLaser ApplicationsTemperature DependenceLaser MaterialIntervalence Band AbsorptionOptoelectronicsThreshold Current
Measurements are presented of the temperature dependence of the differential quantum efficiency ηd and threshold current density Jth of 1.6 µm In1-xGaxAsyP1-y lasers. The observed sharp decrease in ηd near room temperature is interpreted as due to absorption associated with transitions of electrons from the split-off valence band into holes injected into and thermally generated within the heavy hole valence band. Preliminary calculations using conventional laser theory predict a temperature variation corresponding to T0≃145 K. This together with the influence of ηd, appears to be sufficient to explain most of the observed temperature variation of Jth.
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