Control of Threshold Voltage of Enhancement-Mode Al_xGa_1-xN/GaN Junction Heterostructure Field-Effect Transistors Using p-GaN Gate Contact

Abstract

Detailed device parameters necessary for the enhancement-mode operation of p-GaN/u-AlxGa1-xN/u-GaN junction heterostructure field-effect transistors (JHFETs) using p-type GaN gate contacts are determined by both simulation and experiments. Threshold voltage can be precisely controlled by changing the unintentionally doped AlxGa1-xN barrier layer thickness and AlN molar fraction x.