Ion implantation of porous silicon

Abstract

We have investigated the properties of light-emitting porous silicon after ion implantation and successive annealing through continuous-wave photoluminescence (CWPL) and time dependent photoluminescence (TDPL) spectroscopies. Implantation was performed with phosphorus, boron and silicon ions of different doses and energies. Low dose dopant implantation keeps or even increases the CWPL intensity and increases the TDPL decay time. High dose dopant implantation and silicon self-implantation reduce the CWPL intensity and slightly decrease the TDPL decay time.