Santosh Kurinec

Examination of the Interplay Between Polarization Switching and Charge Trapping in Ferroelectric FET

Shan Deng, Zhouhang Jiang, Sourav Dutta et al. · 2020 · 69 citations

Engineering, Charge Transport, Magnetism +17

Unraveling the Dynamics of Charge Trapping and De-Trapping in Ferroelectric FETs

Shan Deng, Zijian Zhao, You Sung Kim et al. · IEEE Transactions on Electron Devices · 2022 · 53 citations

Non-volatile Memory, Engineering, Charge Transport +21

Monolithically integrated Si/SiGe resonant interband tunnel diode/CMOS demonstrating low voltage MOBILE operation

S. Sudirgo, R.P. Nandgaonkar, B. Curanovic et al. · Solid-State Electronics · 2004 · 50 citations

Low-power Electronics, Electrical Engineering, Engineering +4

Diffusion barrier cladding in Si/SiGe resonant interband tunneling diodes and their patterned growth on PMOS source/drain regions

Niu Jin, Sung-Yong Chung, Anthony T. Rice et al. · IEEE Transactions on Electron Devices · 2003 · 47 citations

Materials Science, Room Temperature, Electrical Engineering +14

Evaluation of Si:HfO₂Ferroelectric Properties in MFM and MFIS Structures

Jackson Anderson, Jordan Merkel, David MacMahon et al. · IEEE Journal of the Electron Devices Society · 2018 · 41 citations · Full text

Engineering, Thin Film Process Technology, Nm Silicon +16