Power MOSFET temperature measurements

Abstract

Three temperature-sensitive electrical parameters are compared as thermometers for power MOSFET devices. The parameters are the forward drain-body diode voltage, the source-gate voltage, and the on-resistance. The results are also compared with temperatures measured with an infrared microradiometer. The procedure, apparatus, and circuits required to use each of the parameters as a thermometer are described. Some general considerations for measuring the temperature of power semiconductor devices are also discussed. Each parameter is found to be satisfactory for measuring the temperature of power MOSFETs. The sourcegate voltage measures a temperature nearest to the peak device temperature, and the drain-body diode voltage shows the least variation in calbiration from device to device.