Argon plasma treatment effects on SiSiO2 structures

Interface trap generation in silicon dioxide when electrons are captured by trapped holes

Sz‐Nian Lai · Journal of Applied Physics · 1983 · 495 citations

Engineering, Materials Science, Condensed Matter Physics +16

Effective Carrier Mobility in Surface-Space Charge Layers

J. R. Schrieffer · Physical Review · 1955 · 383 citations

Natural Sciences, Electrical Engineering, Materials Science +17

Transport Properties of Electrons in Inverted Silicon Surfaces

F. F. Fang, A. B. Fowler · Physical Review · 1968 · 332 citations

Natural Sciences, Materials Science, Physics +17

Stress in thermal SiO2 during growth

E.P. EerNisse · Applied Physics Letters · 1979 · 277 citations

Natural Sciences, Materials Engineering, Materials Science +14

Theory of continuously distributed trap states at Si-SiO2 interfaces

Takeshi Sakurai, T. Sugano · Journal of Applied Physics · 1981 · 235 citations

Natural Sciences, Materials Science, Physics +17