Japanese Journal of Applied Physics · 1986 · 82 citations · 6 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsIntegrated Circuit DesignIntegrated Circuit FabricationLiquid CrystalsSemiconductor Device MaterialsSemiconductor Thin FilmsThin-film TransistorsAmorphous SiliconElectron MobilityHigh-electron-mobility TransistorsLow-temperature FabricationPolysiliconSilicon-based Oscillators
Advanced polysilicon SFT's (Super-thin-Film Transistor) were fabricated on quartz at a low temperature process below 610°C. Using the technique of Si + ion implanted amorphization and subsequent solid phase growth and making a super-thin-film structure, superior electrical characteristics such as high electron mobility of 60 cm 2 /(V·s) were obtained. The oscillation of a 19 stage ring oscillator with a channel length of 8.4 µm was observed. Propagation delay time of 8.13 ns/stage was attained. The device is expected to be applied to monolithic liquid-crystal-display on low temperature glass and three dimensional LSI technology.
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Glow discharge polycrystalline silicon thin-film transistors
Yutaka Hirai, Yoshiyuki Osada, Tadakazu Komatsu et al. · Applied Physics Letters · 1983 · 22 citations