SID Symposium Digest of Technical Papers · 2009 · 64 citations · 7 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsThin FilmsDisplay TechnologiesMetal-oxide-semiconductor Field-effect TransistorsSemiconductor Device MaterialsThin Film Electrical PropertiesThin-film MaterialsThin-film TransistorsCritical RadiusCurvature RadiusFlexible DisplaysFlexible ElectronicsOrganic Light-emitting Diode DisplaysOrganic Light-emitting DiodesOxide Thin-film TransistorsThreshold Voltage
Abstract The world largest flexible full color 6.5‐inch active matrix organic light emitting diode (AMOLED) display with top emission mode on plastic film is demonstrated. The active matrix backplanes were fabricated using metal oxide thin film transistors (TFTs). The n‐channel metal oxide TFTs on plastic film exhibited field‐effect mobility of 17.8 cm 2 /Vs, threshold voltage of 0.4 V, on/off ratio of 1.1× 108, and subthreshold slope of 0.34 V/dec. These TFT performance characteristics made it possible to integrate scan driver circuit, demux switching and compensation circuit on the panel. Bending tests were performed with TFT backplane samples to determine critical curvature radius to which the panel can be bent without TFT performance degradation. The results were compared with the calculations that took into account thicknesses and mechanical constants of flexible substrate and of thin‐film layers in AMOLED device.
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Static properties of chiral models with SU(3) group structure
Physics Reports · 2002 · 32 citations · Full text