1979 · 17 citations · 3 references
EngineeringComputer EngineeringElectrical EngineeringMemoryMicroelectronicsSemiconductor DevicesDynamic Power ReductionLow-power Digital Circuit DesignMemory DevicesMemory Subsystem DesignPower ManagementDynamic Power DissipationEnergy-efficient Memory DesignLow-power Memory ArchitectureLow-power Memory CircuitsMemory Circuit DesignMemory CircuitsNon-volatile Memory DesignPower-efficient Memory Design
THIS PAPER will describe a prototype 4,096-bit ECL compatible bipolar RAM with a typical access time and power dissipation of 6ns and 650mW, respectively, using a switched load resistor memory cell and a word line driver.
3
A 1024-bit ECL RAM with 15-ns access time
R. Rathbone, H. Ernst, Hans-Walter Glock et al. · 1976 · 22 citations
Engineering, Computer Engineering, Electrical Engineering +14
A high-speed low-power 4096 x 1 bit bipolar RAM
A. Hotta, Y. Kato, Kizashi Yamaguchi et al. · IEEE Journal of Solid-State Circuits · 1978 · 13 citations
Engineering, Computer Engineering, Electrical Engineering +15
W. Herndon, W. Ho, Rolando Ramirez · 1977 · 10 citations
Engineering, Computer Engineering, Electrical Engineering +14