1976 · 22 citations · 0 references
EngineeringComputer EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesVlsi DesignCmos Circuit DesignDynamic Power ReductionLow-power Digital Circuit DesignTiming AnalysisCircuit Transient AnalysisDissipationDissipation RateMemory Circuit DesignNon-volatile Memory DesignPower-efficient Memory DesignRandom Access Memory (Ram)
DEVELOPMENT SAMPLES of a 1024-bit bipolar ECI, RAM have shown typical address access time of 15 ns at 400 mW dissipation. This access time is faster than the previously rcported 1K RAM access time of 25 ns'. Results were achieved by a combination of oxide isolation technology with N-epitaxy2 - OXIS - and improved ECL circuit design. Measurements agree well with calculations made using a fast transient analysis program.