Japanese Journal of Applied Physics · 1993 · 45 citations · 20 references
Natural SciencesMaterials SciencePhysicsSpectroscopySurface ChemistrySurface ScienceSemiconductor DefectsSemiconductor SurfacesSilicon MaterialsSurface CrystallographySurface PhysicsSurface SpectroscopySilicon ChemistrySilicon ImpuritiesSilicon InterfacesSilicon PhysicsSilicon Surface ScienceSurface Defects Characterization
The absolute coverage of K on the Si(111)-3×1-K surface which was prepared by deposition of K on the 420°C Si substrate was determined, by using coaxial impact-collision ion scattering spectroscopy, to be 0.29±0.03ML. This result rules out the possibility that the 3×1-K phase is formed by K impurity stabilization claimed by several groups. Another important implication of this result is that K atoms of the 3×1 overlayer are not imaged bright in the STM.
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M. Katayama, Eiichi Nomura, Norio Kanekama et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1988 · 206 citations