Toshio Sakurai Toshio Sakurai

Author

Tohoku University

Also Known As

Toshio Sakurai Toshio Sakurai

Publications

568

Citations

H-Index

Concepts

All Affiliations

Tohoku University

About

Toshio Sakurai Toshio Sakurai is an author at Tohoku University specializing in applied physics, engineering, and surface science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	13	15	551
2	Applied Physics	13	15	551
3	Chemistry	7	7	327
4	Natural Sciences	5	5	228
5	Electrical Engineering	1	1	22

Toshio Sakurai Toshio Sakurai

Publications

551

Citations

H-Index

Page 1

	Year	Citations
Field Ion-Scanning Tunneling Microscopy Study of C<sub>60</sub> on the Si(100) Surface Tomihiro Hashizume, Xiang-Dong Wang, Yūichirō Nishina, Japanese Journal of Applied Physics EngineeringMicroscopyChemistryHexagonal PackingTunneling Microscopy	1992	152
C<sub>60</sub> Grown on the Cu(111)1×1 Surface Kumi Motai, Tomihiro Hashizume, Hisanori Shinohara, Japanese Journal of Applied Physics Materials ScienceSurface CharacterizationEngineeringTunneling MicroscopyC 60	1993	75
Field Ion-Scanning Tunneling Microscopy Study of the Ag(110)-O System Tomihiro Hashizume, Masahiro Taniguchi, Kumi Motai, Japanese Journal of Applied Physics Materials ScienceSurface CharacterizationEngineeringTunneling MicroscopyPhysics	1991	57
The Absolute Coverage of K on the Si(111)-3×1-K Surface Tomihiro Hashizume, Mitsuhiro Katayama, Dongryul Jeon, Japanese Journal of Applied Physics Materials ScienceSurface CharacterizationEngineeringCrystalline DefectsPhysics	1993	45
Ordering of Missing-Row-Defects Forming (2×n)-Bi Phases on the Si(100) 2×1 Surface Studied by the Scanning Tunneling Microscopy Chan Park, Raoulf Z. Bakhtizin, Tomihiro Hashizume Tomihiro Hashizume, Japanese Journal of Applied Physics Scanning Tunneling MicroscopyEngineeringLinear Type DefectsSilicon On InsulatorTunneling Microscopy	1993	30
An Observation of Benzotriazole (BTA) Adsorption on Cu(110) by the Ultra High Vacuum (UHV)-Scanning Tunneling Microscope (STM) and Low Energy Electron Difiraction (LEED) Kyehyun Cho, Jiro Kishimoto, Tomihiro Hashizume Tomihiro Hashizume, Japanese Journal of Applied Physics Materials ScienceUltra High VacuumEngineeringTunneling MicroscopySurface Chemistry	1994	24
Field Ion-Scanning Tunneling Microscopy of Metallofullerenes Adsorbed on the Si(100)2×1 Surface Xiang-Dong Wang, Tomihiro Hashizume, Qi-Kun Xue, Japanese Journal of Applied Physics EngineeringChemistryTunneling MicroscopySiliceneFullerene	1993	23
GaAs(100) (2×4) Surface Study by Molecular Beam Epitaxy and Field-Ion-Scanning-Tunneling-Microscopy Hongwei Xu, Tomihiro Hashizume Tomihiro Hashizume, Toshio Sakurai Toshio Sakurai Japanese Journal of Applied Physics SemiconductorsElectrical EngineeringEpitaxial GrowthEngineeringTunneling Microscopy	1993	22
Initial Stages of Cubic GaN Growth on the GaAs(001) Surface Studied by Scanning Tunneling Microscopy Qi-Kun Xue Qi-Kun Xue, Qi-Zhen Xue Qi-Zhen Xue, Yukio Hasegawa, Japanese Journal of Applied Physics Wide-bandgap SemiconductorEngineeringOptoelectronic DevicesSemiconductor NanostructuresSemiconductors	1997	21
Field Ion-Scanning Tunneling Microscopy Study of C<sub>84</sub> on the Si(100) Surface Tomihiro Hashizume, Xiangdong Wang, Yūichirō Nishina, Japanese Journal of Applied Physics EngineeringMicroscopyChemistrySemiconductorsTunneling Microscopy	1993	21

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