Tomihiro Hashizume Tomihiro Hashizume

Scanning Tunneling Spectroscopy of Dangling-Bond Wires Fabricated on the Si(100)–2×1–H Surface

Taro Hitosugi, Tomihiro Hashizume Tomihiro Hashizume, Seiji Heike et al. · Japanese Journal of Applied Physics · 1997 · 44 citations

Materials Science, Semiconductors, Surface Characterization +14

Theoretical Study of Ga Adsorbates around Dangling-Bond Wires on an H-Terminated Si Surface: Possibility of Atomic-Scale Ferromagnets

Satoshi Watanabe, Masahiko Ichimura, T. Onogi et al. · Japanese Journal of Applied Physics · 1997 · 35 citations

Engineering, Magnetic Resonance, Chemistry +23

Ordering of Missing-Row-Defects Forming (2×n)-Bi Phases on the Si(100) 2×1 Surface Studied by the Scanning Tunneling Microscopy

Chan Park, Raoulf Z. Bakhtizin, Tomihiro Hashizume Tomihiro Hashizume et al. · Japanese Journal of Applied Physics · 1993 · 30 citations

Scanning Tunneling Microscopy, Engineering, Linear Type Defects +18

Property Change of Si(111) Surface by Scanning Tunneling Microscope Manipulation

Seiji Heike, Tomihiro Hashizume Tomihiro Hashizume, Satoshi Watanabe et al. · Japanese Journal of Applied Physics · 1996 · 27 citations

Materials Science, Surface Characterization, Tunneling Microscope Manipulation +15

An Observation of Benzotriazole (BTA) Adsorption on Cu(110) by the Ultra High Vacuum (UHV)-Scanning Tunneling Microscope (STM) and Low Energy Electron Difiraction (LEED)

Kyehyun Cho, Jiro Kishimoto, Tomihiro Hashizume Tomihiro Hashizume et al. · Japanese Journal of Applied Physics · 1994 · 24 citations

Materials Science, Ultra High Vacuum, Engineering +13