Tomihiro Hashizume Tomihiro Hashizume

Author

Tohoku University

Also Known As

Tomihiro Hashizume Tomihiro Hashizume

Publications

229

Citations

H-Index

Concepts

All Affiliations

Tohoku University Hitachi (Japan)

About

Tomihiro Hashizume Tomihiro Hashizume is an author at Tohoku University specializing in applied physics, engineering, and surface science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	8	8	214
2	Applied Physics	8	8	214
3	Chemistry	4	4	91
4	Natural Sciences	3	3	67
5	Electrical Engineering	1	1	22

Tomihiro Hashizume Tomihiro Hashizume

Publications

214

Citations

H-Index

Page 1

	Year	Citations
Scanning Tunneling Spectroscopy of Dangling-Bond Wires Fabricated on the Si(100)–2×1–H Surface Taro Hitosugi, Tomihiro Hashizume Tomihiro Hashizume, Seiji Heike, Japanese Journal of Applied Physics Materials ScienceSemiconductorsSurface CharacterizationDangling-bond Wires FabricatedEngineering	1997	44
Theoretical Study of Ga Adsorbates around Dangling-Bond Wires on an H-Terminated Si Surface: Possibility of Atomic-Scale Ferromagnets Satoshi Watanabe, Masahiko Ichimura, T. Onogi, Japanese Journal of Applied Physics EngineeringMagnetic ResonanceChemistrySilicon On InsulatorMagnetic Moments	1997	35
Ordering of Missing-Row-Defects Forming (2×n)-Bi Phases on the Si(100) 2×1 Surface Studied by the Scanning Tunneling Microscopy Chan Park, Raoulf Z. Bakhtizin, Tomihiro Hashizume Tomihiro Hashizume, Japanese Journal of Applied Physics Scanning Tunneling MicroscopyEngineeringLinear Type DefectsSilicon On InsulatorTunneling Microscopy	1993	30
Property Change of Si(111) Surface by Scanning Tunneling Microscope Manipulation Seiji Heike, Tomihiro Hashizume Tomihiro Hashizume, Satoshi Watanabe, Japanese Journal of Applied Physics Materials ScienceSurface CharacterizationTunneling Microscope ManipulationTrench LinesSurface Area	1996	27
An Observation of Benzotriazole (BTA) Adsorption on Cu(110) by the Ultra High Vacuum (UHV)-Scanning Tunneling Microscope (STM) and Low Energy Electron Difiraction (LEED) Kyehyun Cho, Jiro Kishimoto, Tomihiro Hashizume Tomihiro Hashizume, Japanese Journal of Applied Physics Materials ScienceUltra High VacuumEngineeringTunneling MicroscopySurface Chemistry	1994	24
GaAs(100) (2×4) Surface Study by Molecular Beam Epitaxy and Field-Ion-Scanning-Tunneling-Microscopy Hongwei Xu, Tomihiro Hashizume Tomihiro Hashizume, Toshio Sakurai Toshio Sakurai Japanese Journal of Applied Physics SemiconductorsElectrical EngineeringEpitaxial GrowthEngineeringTunneling Microscopy	1993	22
Scanning Tunneling Microscopy of √3×√3-Bi Reconstruction on the Si(111) Surface Chan Park, Raouf Z. Bakhtizin, Tomihiro Hashizume Tomihiro Hashizume, Japanese Journal of Applied Physics EngineeringMicroscopyChemistryTunneling MicroscopyTrimer Phase	1993	20
Structure of the Bi/Si(111) Surface by Field-Ion Scanning Tunneling Microscopy Chan Park, Raouf Z. Bakhtizin, Tomihiro Hashizume Tomihiro Hashizume, Japanese Journal of Applied Physics EngineeringChemistryTunneling MicroscopySurface ReconstructionMaterials Science	1993	12

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