Scanning Tunneling Spectroscopy of Dangling-Bond Wires Fabricated on the Si(100)–2×1–H Surface

Abstract

Tunneling spectroscopy of atomic-scale dangling-bond wires on a hydrogen-terminated Si(100)–2×1–H surface is studied using ultrahigh-vacuum scanning tunneling microscopy. Individual dangling bonds are fabricated by extracting hydrogen atoms one by one from the hydrogen terminated surface to form atomic-scale dangling-bond wires. These wires show a finite density of states at the Fermi level and do not show semiconductive band gaps. The results are compared with first-principles theoretical calculations.