Applied Physics Letters · 1994 · 103 citations · 4 references
Natural SciencesMaterials EngineeringMaterials ScienceOptical MaterialsOptoelectronicsSemiconductor MaterialsDopingOptical Properties Of SolidsOptical Thin FilmsOxide SemiconductorsSemiconductor Device MaterialsTransparent Conducting OxidesGallium OxideIndium Tin Oxide Thin FilmsOxide DopingThin Oxide FilmsThin-film OxidesTransparent Conductive OxidesTransparent Electronics
GaInO3, a layered material with the β Ga2O3 crystal structure, can be doped with electrons through the introduction of oxygen deficiency, Sn doping for In, or Ge doping for Ga. At atomic doping levels of 10% or less, resistivities as low as 3 mΩ cm are obtained. In contrast to polycrystalline indium tin oxide (ITO), which is distinctly green, conductive gallium indium oxide is light grey with no visible coloration. Thin films of doped GaInO3 display good transparency over the whole optical window, superior to that of ITO in the green-blue region.
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