Optics Express · 2010 · 10 citations · 13 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLight SourcesLight-emitting DiodesLuminescent MaterialsOptoelectronic DevicesSpintronic MaterialsSpintronicsCurrentsForward Bias CharacteristicsGallium Nitride (Gan) MaterialsGallium Nitride Light-emitting DiodesLight-emitting Diode MaterialsPower OutputPower Output CapabilitySpin Injection
This study discusses the effect of spin-polarized injection and photo-ionization on MnZnO films formed on the surface of GaN-based light-emitting diodes (LEDs). In a magnetic field, the optical output power of GaN-based LEDs increased by about 60% and 50% at injection currents of 20 and 100 mA, respectively. Spin-polarized injection from a MnZnO film and photo-ionization in GaN-based LED can efficiently improve the optical output power of a GaN-based LED. At forward bias of 3.4 V, the forward current of GaN-based LED with MnZnO film in a magnetic field of 0.5 T includes an injection current of 33.71 mA, spin-polarized current of 0.97 mA, and photo-ionized current of 0.4 mA.
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Electronic analog of the electro-optic modulator
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Room-Temperature Spin Injection from Fe into GaAs
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