Applied Physics Letters · 2003 · 51 citations · 15 references
Natural SciencesMaterials EngineeringMaterials ScienceNanomaterialsNanotechnologySemiconductor MaterialsChemical Vapor DepositionNanomaterial CharacterizationQuantum DotsSelf-assembled NanostructuresSelf-assembly Of NanomaterialsSemiconductor NanomaterialsPhysical PropertiesQuantum Dot MaterialsRapid CoolingRing StructureSelf-assembled Quantum DotsSemiconductor NanostructuresSemiconductor Quantum DotsSilicon Nanostructures
Nanorings with an average height and diameter of 1.2 and 65 nm, respectively, were observed to form in Si-capped Ge quantum dots grown at 600 °C by ultrahigh-vacuum chemical vapor deposition. The nanorings were captured with the rapid cooling of the samples with appropriate amount of Si capping. Based on the results of transmission electron microscopy and Raman spectroscopy, the formation of nanorings is attributed to alloying and strain relief in the Si/Ge/(001)Si system. The self-assembly of nanorings provides a useful scheme to form ultrasmall ring-like structure and facilitates the characterization of the physical properties of unconventional quantum structures.
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Spectroscopy of Nanoscopic Semiconductor Rings
A. Lorke, R.J. Luyken, Alexander O. Govorov et al. · Physical Review Letters · 2000 · 823 citations · Full text
Raman scattering from Ge<i>x</i>Si1−<i>x</i>/Si strained-layer superlattices
F. Cerdeira, A. Pinczuk, J. C. Bean et al. · Applied Physics Letters · 1984 · 263 citations