Double Injection in Deep-Lying Impurity Semiconductors

Abstract

The analysis of double injection for a semi-insulator model with a single recombination center extends previous treatments by varying the ratio of occupied and unoccupied centers. The voltage-current characteristic of the model consists of an Ohm's-law region followed by a square-law region that terminates into a vertically rising current (threshold of double injection). Expressions for the Ohm's-law-square-law intersection voltage and the threshold (breakdown) voltages represent experimental results better than expressions derived from earlier models. Together with experimental voltages from Au-doped Ge devices at low temperature, these expressions give the electron- and hole-capture-cross section of the recombination center.