Feasibility study of Si and SiC MOSFETs in high-gain DC/DC converter for renewable energy applications

Abstract

This paper presents an evaluative comparison of Si- and SiC-based MOSFETs, operating in a qZS-derived step-up DC/DC converter. Special attention is paid to switching behaviour and power dissipation. A range of experiments was performed to determine an optimal di/dt value during transients to minimise overvoltages and dynamic losses. Additionally, some particular properties such as gate driver requirements, housing types and price are discussed.