The dependence of the Schottky emission coefficient on reverse bias

Abstract

The dependence of the Schottky emission coefficient on reverse bias has been measured on several PtSi Schottky diodes. The data as well as a model which fits the experimental results are presented. The model is based on the assumption that carriers are not emitted until they surmount the Schottky barrier and, further, that the probability of the carrier traveling from the metal-semiconductor interface to the Schottky barrier maximum within the semiconductor decays exponentially with distance.