Japanese Journal of Applied Physics · 1991 · 11 citations · 15 references
Natural SciencesMaterials EngineeringMaterials ScienceMaterials CharacterizationOptical MaterialsThin FilmsSurface PhysicsThin Film Electrical PropertiesThin Film Optical PropertiesThin Film Surface MorphologyThin-film DepositionThin-film MaterialsDegradationMagnetron SputteringNitride Thin FilmsNitrides Thin FilmsOptical TransmittanceSputter DepositionSputteringSputtering Processes
Several properties of sputtered AlN films prepared in N 2 gas by planar magnetron sputtering with facing targets were investigated. Highly c -axis-oriented films with columnar structure were obtained at the pressure range of 10 -3 Torr of N 2 gas. Film degradations such as the decrease of the degree of c -axis orientation, film coloring, and film peeling were also observed at lower gas pressures below 1×10 -3 Torr. From the results of optical transmittance and film composition estimation by energy-dispersion X-ray spectroscopy, these film degradation were related to the excess of N atoms in the film growth process.
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