Surface‐activating‐bonding‐based low‐resistance Si/III‐V junctions

Abstract

The electrical properties of pn junctions, with various semiconductor materials with different doping concentrations fabricated by using surface‐activated‐bonding (SAB), were investigated by measuring their current‐voltage ( I‐V ) characteristics. The I‐V characteristics of p + ‐GaAs/ n ++ ‐Si, p + ‐GaAs/ n + ‐Si, p + ‐Si/ n + ‐Si, p ++ ‐Si/ n + ‐InGaP, and p + ‐Si/ n + ‐InGaP junctions showed ohmic‐like properties. The interface resistance and the resultant electrical loss decreased with increasing impurity concentration at the interface. These results demonstrate the significance of SAB for fabricating tandem solar cells.