Publication | Closed Access
Study of resistive random access memory based on TiN/TaOx/TiN integrated into a 65nm advanced complementary metal oxide semiconductor technology
25
Citations
8
References
2012
Year
Semiconductor TechnologyNon-volatile MemoryElectrical EngineeringEngineeringNanoelectronicsApplied PhysicsMemory DeviceSemiconductor MemoryResistive Random-access MemoryMicroelectronicsAdvanced Complementary Metal
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