Concepedia

Impurity induced disordering of GaInAs quantum wells with barriers of AlGaInAs or of GaInAsP

J.H. Marsh, S. A. Bradshaw, A.C. Bryce, R. Gwilliam, R.W. Glew

Journal of Electronic Materials · 1991 · 28 citations · 17 references

DOI

Concepts

References

17

Band gap versus composition and demonstration of Vegard’s law for In1−<i>x</i>Ga<i>x</i>As<i>y</i>P1−<i>y</i> lattice matched to InP

R. E. Nahory, M. A. Pollack, W. D. Johnston et al. · Applied Physics Letters · 1978 · 415 citations

, , +16

Prevention of InP surface decomposition in liquid phase epitaxial growth

G. A. Antypas · Applied Physics Letters · 1980 · 80 citations

, , +14

Very low threshold InGaAs/InGaAsP graded index separate confinement heterostructure quantum well lasers grown by atmospheric pressure metalorganic vapor phase epitaxy

T. Tanbun-Ek, R. A. Logan, H. Temkin et al. · Applied Physics Letters · 1989 · 56 citations

, , +17

Intermixing Process of InGaAs/InP MQW Grown by Metalorganic Molecular Beam Epitaxy at Thermal Annealing

Kiichi Nakashima, Yoshihiro Kawaguchi, Yuichi Kawamura et al. · Japanese Journal of Applied Physics · 1987 · 40 citations

, , +15

Growth and characterization of AlGaInAs lattice matched to InP grown by molecular-beam epitaxy

J. P. Praseuth, M. C. Joncour, Jean‐Michel Gérard et al. · Journal of Applied Physics · 1988 · 39 citations

, , +17