High‐Mobility Ambipolar Near‐Infrared Light‐Emitting Polymer Field‐Effect Transistors

Abstract

A polymer semiconductor with ambipolar charge transport properties, BBTDPP1, is presented. Solution-processed ambipolar field-effect transistors based on this material exhibit hole and electron mobilities of 0.1 cm2 V−1 s−1 and up to 0.09 cm2 V−1 s−1, respectively. Near-infrared light emission from top-gate as well as bottom-gate ambipolar field-effect transistors based on BBTDPP1 is also reported.