Vertical profile optimization for +400 GHz fMAX Si/SiGe:C HBTs

Abstract

This paper summarizes the work carried out on the vertical profile of double-polysilicon SiGe:C HBTs to get f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">MAX</sub> above 400 GHz. The effects of the final spike annealing temperature, the emitter doping species, the base and collector doping levels and the Si capping layer thickness are presented and discussed.