Concepedia

Double-heterostructure PbS-PbSe-PbS lasers with cw operation up to 120 K

H. Preier, M. Bleicher, Wolfgang Riedel, H. Maier

Journal of Applied Physics · 1976 · 23 citations · 6 references

Abstract

Double-heterojunction PbS-PbSe-PbS lasers were fabricated by hot-wall epitaxy allowing cw operation for heat-sink temperatures up to 120 K and pulsed operation up to 180 K. The emitted wavelength can be temperature tuned from 8.5 to 6.5 μm for the cw and from 8.6 to 5.8 μm for the pulsed mode. Threshold current densities of less than 1 kA cm−2 were obtained at 77 K.

References

6

Spontaneous and Stimulated Recombination Radiation in Semiconductors

Gordon Lasher, Frank Stern · Physical Review · 1964 · 768 citations

Engineering, Electrical Engineering, Optoelectronics +14

Double-heterostructure PbSnTe lasers grown by molecular-beam epitaxy with cw operation up to 114 K

J. N. Walpole, A. R. Calawa, T. C. Harman et al. · Applied Physics Letters · 1976 · 96 citations

Engineering, Materials Engineering, Materials Science +17

Double heterostructure Pb1-<i>x</i>Sn<i>x</i> Te–PbTe lasers with cw operation at 77 K

S. H. Groves, K. W. Nill, A. J. Strauss · Applied Physics Letters · 1974 · 94 citations

Engineering, Materials Science, Physics +17

TEMPERATURE AND COMPOSITIONAL DEPENDENCE OF LASER EMISSION IN Pb1−<i>x</i>Sn<i>x</i>Se

T. C. Harman, A. R. Calawa, I. Melngailis et al. · Applied Physics Letters · 1969 · 55 citations

Engineering, Materials Engineering, Materials Science +17

Double heterojunction PbS-PbS1−<i>x</i>Se<i>x</i>-PbS laser diodes with cw operation up to 96 K

H. Preier, M. Bleicher, Wolfgang Riedel et al. · Applied Physics Letters · 1976 · 35 citations

Engineering, Electrical Engineering, Materials Science +17