Effect of thermal resistivity on the catastrophic optical damage power density of AlGaInP laser diodes

Abstract

We show that the low catastrophic optical damage power density observed for AlGaInP laser diodes (LDs) (1/2 to 1/2.9 that of AlGaAs LDs) is mainly attributable to the high thermal resistivities of the materials (5.5 times higher than for AlGaAs LDs) by using a thermal runaway model calculation.