Yoshiyasu Ueno - Concepedia

Author

Yoshiyasu Ueno

NEC (Japan)

Also Known As

Y. Ueno, Yoshiyasu UENO, Yoshiyasu Ueno

Publications

692

Citations

H-Index

Concepts

All Affiliations

NEC (Japan)University of Electro-Communications Technical University of Denmark

About

Yoshiyasu Ueno is an author at NEC (Japan) specializing in engineering, optoelectronics, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	12	14	490
2	Applied Physics	10	11	365
3	Physics	7	7	191
4	Materials Science	5	5	188
5	Electrical Engineering	4	4	77

Yoshiyasu Ueno

Publications

602

Citations

H-Index

Page 1

	Year	Citations
Nonlinear phase shifts induced by semiconductor optical amplifiers with control pulses at repetition frequencies in the 40–160-GHz range for use in ultrahigh-speed all-optical signal processing Yoshiyasu Ueno, Shigeru Nakamura, Kazuhito Tajima Journal of the Optical Society of America B Control PulsesOptical MaterialsSemiconductor Optical AmplifierEngineeringNonlinear Optics	2002	102
Experimental and theoretical investigation of the impact of ultra-fast carrier dynamics on high-speed SOA-based all-optical switches M.L. Nielsen, Jesper Mørk, Rei Suzuki, Optics Express	2006	77
Femtosecond switching with semiconductor-optical-amplifier-based Symmetric Mach–Zehnder-type all-optical switch Shigeru Nakamura, Yoshiyasu Ueno, Kazuhito Tajima Applied Physics Letters PhotonicsNonlinear Phase ShiftsSemiconductor Optical AmplifierEngineeringNonlinear Optics	2001	61
Nonexistence of Long-Range Order in Ga<sub>0.5</sub>In<sub>0.5</sub>P Epitaxial Layers Grown on (111)B and (110)GaAs Substrates Akiko Gomyo, T. Suzuki, Sumio Iijima, Japanese Journal of Applied Physics SemiconductorsMaterials ScienceWide-bandgap SemiconductorIi-vi SemiconductorEngineering	1988	57
Novel Window-Structure AlGaInP Visible-Light Laser Diodes with Non-Absorbing Facets Fabricated by Utilizing GaInP Natural Superlattice Disordering Yoshiyasu Ueno, Hiroaki Fujii, K. Kobayashi, Japanese Journal of Applied Physics Window-structure Algainp Visible-lightEngineeringLaser ScienceLaser ApplicationsLaser Physics	1990	54
632.7 nm CW Operation (20°C) of AlGaInP Visible Laser Diodes Fabricated on (001) 6° off toward [110] GaAs Substrate Kenichi Kobayashi, Yoshiyasu Ueno, Hitoshi Hotta, Japanese Journal of Applied Physics EngineeringLaser ScienceLaser ApplicationsLaser PhysicsLaser Material	1990	39
Effect of thermal resistivity on the catastrophic optical damage power density of AlGaInP laser diodes Hiroaki Fujii, Yoshiyasu Ueno, Kenji Endo Applied Physics Letters High Thermal ResistivitiesAluminium NitrideElectrical EngineeringOptical MaterialsEngineering	1993	36
Second-order susceptibility of Ga_05In_05P crystals at 15 μm and their feasibility for waveguide quasi-phase matching Yoshiyasu Ueno, Vincent Ricci, G. I. Stegeman Journal of the Optical Society of America B Optical MaterialsEngineeringWaveguide Quasi-phase MatchingCrystal-film OrientationSemiconductors	1997	34
Record low-power all-optical semiconductor switch operation at ultrafast repetition rates above the carrier cutoff frequency Yoshiyasu Ueno, Shigeru Nakamura, Kazuhito Tajima Optics Letters	1998	25
Oscillator strength enhancement for [110]-polarized light in compressively strained GaInP ordered crystals used in AlGaInP lasers Yoshiyasu Ueno Applied Physics Letters Materials SciencePhotonicsOptical PumpingEngineeringPhysics	1993	23

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