Publication | Closed Access
Nonexistence of Long-Range Order in Ga<sub>0.5</sub>In<sub>0.5</sub>P Epitaxial Layers Grown on (111)B and (110)GaAs Substrates
57
Citations
9
References
1988
Year
SemiconductorsMaterials ScienceWide-bandgap SemiconductorIi-vi SemiconductorEngineeringPhysicsGaas SubstratesP LayersGa 0.5Applied PhysicsQuantum MaterialsCondensed Matter PhysicsWide-bandgap SemiconductorsBand-gap EnergyGallium OxideEpitaxial GrowthCompound SemiconductorLong-range Order
It has been found that Ga 0.5 In 0.5 P layers grown at 700°C on (111)B and (110)GaAs substrates do not show {1/2, 1/2, 1/2} superlattice (SL) formation, in contrast to that for the layers grown on (001)GaAs. The band-gap energy for these layers, which show no SL and are lattice-matched to GaAs, was estimated to be 1.918±0.002 eV at room temperature.
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