Electromigration of In Ultrathin Film on Si(111)

Abstract

The electromigration of a pad of In ultrathin film with a thickness of several monolayers on a Si(111) 7×7 surface was investigated by scanning Auger electron spectroscopy. Indium atoms moved to the cathode in the ultrathin film contrary to conventional electromigration in bulk materials and in thin films and had a mobility of 8.5×10 -5 cm 2 /(V·s) at 80°C. This is three orders of magnitude greater than the mobility of ordinary films. The morphology of the ultrathin film in the process of the movement was studied particularly carefully and proved to be associated with the growth mode of the In film on Si(111).