Reactive Ion Etching of Transparent Conducting Tin Oxide Films Using Electron Cyclotron Resonance Hydrogen Plasma

Abstract

The dry etching of tin oxide films using electron cyclotron resonance (ECR) hydrogen plasma has been proposed. It is found that the etching rate is drastically increased by the use of reactive gases, such as n-butyl acetone, acetone, alchohols and methane, which are activated by the ECR hydrogen plasma. A high etching rate above 175 nm/min can be achieved by the use of n-butyl acetone as the reactive gas. The mechanism of reactive ion etching using the ECR hydrogen plasma has also been discussed.