1980 · 24 citations · 1 references
EngineeringComputer EngineeringElectrical EngineeringFault ToleranceMicroelectronicsSemiconductor DevicesCmos Circuit DesignDevice ReliabilityEmbedded Memory BlocksIntegrated Circuit DesignMemory DevicesCmos Fabrication ProcessesDry EtchingEtchingFault-tolerant MemoryMemory Circuit DesignNon-volatile Memory DesignPolysiliconRandom Access Memory (Ram)
A 256K DYNAMIC RAM using molybdenum-polysilicon (Mo-Poly) technology will be described. The 1μm rule fabrication process has been developed, which includes the electron beam direct writing and dry etching technologies. Furthermore the RAM has been designed as fault tolerant by utilizing electrically programmable polysilicon resistors fabricated on the same chip.
1
A high speed molybdenum gate MOS RAM
Masaki Kondo, T. Mano, F. Yanagawa et al. · IEEE Journal of Solid-State Circuits · 1978 · 19 citations
Engineering, Computer Engineering, Electrical Engineering +17