Radiation effects on SOI analog devices parameters

Abstract

Investigations of test circuit parameters in a mixed analog-digital technology (including CMOS, PJFET and NPN) are presented. The changes in electrical parameters as a function of the level of radiation up to 10 Mrad(SiO/sub 2/) and 3.8 10/sup 14/ neutrons/cm/sup 2/ are reported. Analysis pertains to hardness limiting mechanism identification.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>