Applied Physics Letters · 1974 · 91 citations · 5 references
EngineeringMaterials EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsOptical Properties Of SemiconductorsSemiconductor Crystal GrowthSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor LasersSemiconductor PhysicsCurrent DensityDouble Heterostructure DevicesDouble HeterostructuresHeterostructure DevicesHeterostructure LasersLiquid Phase EpitaxyMolecular Beam EpitaxyThreshold Current Reduction
GaAs–Alx Ga1−x As double-heterostructure (DH) lasers that exhibit laser properties similar to DH lasers prepared by liquid-phase epitaxy have been prepared by molecular-beam epitaxy. For a structure with a 0.53-μ-thick active layer, the as-grown threshold current density at room temperature was 3.5×104 A/cm2, but by annealing the threshold was reduced to 4.0×103 A/cm2.
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